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BCR169F 1SS419 SPR1603C 93C46 FQP6N50 CONTR SK435CT 48S03
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  any changing of specification will not be informed individual S9014 npn silicon pre-amplifier, low level & low noise device ma rking: S9014 =j6  power dissipation  pcm : 0.2 w collector current  icm : 0.1 a collector-base voltage features collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 electrical characteristics ( tamp.=25 o c unless otherwise specified) v (br)cbo : 50 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 3 p a r a m e t e r sy mbol t e st conditions min t yp max unit co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o ic= 100 a i e =0 50 v co llecto r -emitter b r eakd o w n v o lt ag e v (b r)ce o ic= 0.1ma i b =0 45 v emitter-b ase b r eakd o w n v o lt ag e v ( br ) ebo i e = 100 a i c =0 5 v co llecto r cu t-o ff cu rren t i cb o v cb = 50 v , i e = 0 0.1 a co llecto r cu t-o ff cu rren t i ce o v ce = 35v , i b = 0 0.1 a emitter cut-off current i ebo v eb = 3v , i c = 0 0.1 a dc c u rre nt ga in h fe v ce =5 v , i c = 1ma 200 1000 co llecto r -emitter satu r atio n v o lt ag e v ce (sat) i c = 100 ma, i b = 5ma 0.3 v base-emitter satu r atio n v o lt ag e v be (sat) i c = 100 ma, i b = 5ma 1 v t r a n s ition fre que nc y f t v ce =5 v , i c = 10ma f= 30mhz 150 mhz c l a s s i f i c a t i o n o f h f e ( 1 ) r a n k l h r a n g e 2 0 0 - 4 5 0 4 5 0 - 1 0 0 0 01 -jun-2004 rev. b page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual S9014 npn silicon low frequency, low noise amplifier   http://www.secosgmbh.com elektronische bauelemente typic al chara cter i st ics f i g u re 1. st ati c ch aracteri s ti c f i g u r e 2. dc c u rren t g a i n f i g u re 3. base-e m i tter satu rati o n vo l t ag e co l l ecto r -e mi tt er s a tu r a ti o n v o l t ag e f i gu r e 4 . cur r e n t ga i n ba nd wid t h p r odu c t 0 1 0 2 03 04 0 5 0 0 10 20 30 40 50 60 70 80 90 100 i b = 1 6 0 a i b = 1 4 0 a i b = 1 2 0 a i b = 1 0 0 a i b = 8 0 a i b = 6 0 a i b = 4 0 a i b = 2 0 a i c [ m a] , co l l e ct or current v ce [ v ], colle ct or-e mit t e r v ol t a ge 1 10 10 0 10 00 10 10 0 10 00 v ce = 5 v h fe , dc current g a in i c [m a ], c o ll e c t o r cu rre nt 1 1 0 1 00 1 000 10 10 0 1 000 i c = 2 0 i b v be (sa t ) v ce (sa t ) v be (s a t ) , v ce ( s at ) [ m v] , saturati on vo l t age i c [ m a] , co l l e c t o r cu rre nt 1 10 100 1000 10 100 1000 v ce = 5 v f t [ m hz], c urr e n t ga i n b a n d w idt h p r od uct i c [m a ], c o l l e c t o r cu rre nt 01 -jun-200 4 rev. b page 2 of 2


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